FQD5N60C / FQU5N60C 600V N-Channel MOSFET is a Fairchild’s proprietary, planar stripe, DMOS technology N-Channel enhancement mode power field effect transistor. It has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
This document provides technical specifications for the Fairchild Semiconductor FQD5N60C and FQU5N60C, which are 600V N-Channel enhancement mode power MOSFETs produced using proprietary planar stripe DMOS technology. The devices feature low on-state resistance and gate charge, making them suitable for high efficiency switched mode power supplies and active power factor correction applications based on half bridge topology.
| Total Gate Charge (typical) | 15 nC |
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