This document describes the features and characteristics of QFET products.
This document provides the design specifications and electrical characteristics for the FQD7P20 and FQU7P20 series of P-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance suitable for high efficiency DC/DC converters.
The datasheet details absolute maximum ratings, electrical characteristics including off and on states, dynamic parameters such as capacitance and gate charge, and typical characteristic curves. It also includes package dimensions for the DPAK and L-PAK formats.
| Drain-Source Voltage | -200 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | -5.7 A |
| On-Resistance | 0.69 Ω |
| Gate Charge (Typical) | 19 nC |
| Operating Temperature Range | -55 to +150 °C |
The device operates and can be stored within a temperature range of -55 to +150 °C.
The device can withstand a single pulsed avalanche energy of 570 mJ under specified test conditions.