FDQ7N10L / FQU7N10L is a N-Channel MOSFET from Fairchild. The device is rated at 100V and can handle a maximum current of 5.8A. The on-state resistance is 0.35 ohms.
The document describes the Fairchild Semiconductor FQD7N10L and FQU7N10L as N-Channel enhancement mode power field effect transistors produced using proprietary DMOS technology. These devices are designed to minimize on-state resistance and provide superior performance in high energy pulse avalanche and commutation modes, making them suitable for low voltage applications such as DC/DC converters and DC motor control.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 5.8 A |
| Power Dissipation (Tg = 25°C) | 25 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Gate Threshold Voltage (Typ) | 1.0 V |
| Drain-Source On-Resistance (Typ) | 0.275 Ohm |
| Package Types | D-PAK, I-PAK |
The maximum continuous drain current at 25°C is 5.8 A.
The operating and storage temperature range is from -55°C to +150°C.
The devices are available in D-PAK and I-PAK packages.