This document describes the features and characteristics of a 250V P-Channel MOSFET product, which is produced using Fairchild's proprietary technology. It has features such as low on-state resistance, fast switching, and high withstand voltage capability, making it suitable for high efficiency switching DC/DC converters.
The document describes the FQD4P25TM_WS / FQU4P25 as a 250V P-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe, DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance for high efficiency switching DC/DC converters.
The datasheet details absolute maximum ratings including a drain-source voltage of -250V and continuous drain currents ranging from -3.1A at 25°C to -1.96A at 100°C. It also lists electrical characteristics such as input capacitance, reverse transfer capacitance, and switching times, alongside typical performance graphs for on-resistance, breakdown voltage, and thermal response.
| Drain-Source Voltage | -250 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | -3.1 A |
| Power Dissipation (Ta = 25°C) | * 25 Ww |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Total Gate Charge (Typ) | 10.3 nC |
The device operates and can be stored within a temperature range of -55 to +150 °C.
The maximum power dissipation is 45 W when the case temperature is maintained at 25°C.