FQD6N50C / FQU6N50C is a 500V N-Channel MOSFET from Fairchild Semiconductor Corporation. Its features are: 4.5A, 500V, RDS(on) = 1.2 Ω @VGS = 10 V, low gate charge (typical 19nC), low Crss (typical 15pF), fast switching, 100% avalanche tested, improved dv/dt capability.
The document describes the Fairchild QFET® FQD6N50C / FQU6N50C, a 500V N-Channel enhancement mode power field effect transistor. These devices utilize Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance for applications such as switched mode power supplies and active power factor correction.
The datasheet details the absolute maximum ratings, electrical characteristics including off and on characteristics, dynamic parameters like capacitance and switching times, and drain-source diode specifications. It also includes typical characteristic curves illustrating breakdown voltage variation, on-resistance vs temperature, and gate charge behavior.
| Continuous Drain Current (ID) @ TC = 25°C | 4.5 A |
|---|---|
| On-Resistance (RDS(on)) @ VGS = 10V, ID = 2.25A | 1.2 Ω |
| Total Gate Charge (Qg) | Typical 19 nC |
| Reverse Transfer Capacitance (Crss) | Typical 15 pF |
| Operating Temperature Range | -55 to +150 °C |
These devices are well suited for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
Yes, the device is 100% avalanche tested.