The document describes the features and characteristics of the products, including certain functions and designs.
This document is a datasheet for the Fairchild FQD6N25 and FQU6N25 N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe, DMOS technology and are designed for high efficiency switching DC/DC converters and switch mode power supplies. The FQD series is available in the D-PAK package, while the FQU series is available in the L-PAK package.
| Drain-Source Voltage | 250 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 4.4 A |
| Continuous Drain Current (Tc = 100°C) | 2.6 A |
| Gate-Source Voltage | +/- 30 V |
| Operating Temperature Range | -55 to +150 °C |
| Package Types | D-PAK, L-PAK |
The maximum continuous drain current is 4.4 A when the case temperature is 25°C.
The maximum drain-source voltage rating is 250 V.
The typical total gate charge is 6.6 nC.