This document describes the features and characteristics of FQD6N40C / FQU6N40C 400V N-Channel MOSFET, including low on-state resistance, fast switching performance, and high energy pulse endurance. It is suitable for high-efficiency switched mode power supplies and electronic lamp ballasts based on half bridge topology.
This document is a datasheet for the Fairchild Semiconductor FQD6N40C and FQU6N40C N-Channel enhancement mode power field effect transistors. These devices utilize the manufacturer's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. They are designed for high efficiency switched mode power supplies and electronic lamp ballasts based on half bridge topology.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings, off and on characteristics, dynamic parameters, and switching characteristics. It also includes typical performance graphs, test circuit diagrams, and mechanical dimensions for the D-PAK and I-PAK package types.
| Drain-Source Voltage | 400 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 4.5 A |
| Continuous Drain Current (Tg = 100°C) | 2.7 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 270 mJ |
| Power Dissipation (Tc = 25°C) | 25 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Types | D-PAK, I-PAK |
The typical gate charge is 16nC.
The typical Crss is 15pF.
Yes, the devices are RoHS Compliant.