QFET is a new type of RF power device with high frequency, high power, high efficiency, high reliability and low cost. QFET has broad application in RF communication, radar, electronic countermeasure, satellite communication, microwave heating and other fields.
This document is a datasheet for the Fairchild Semiconductor FQD9N25 and FQU9N25 N-Channel enhancement mode power field effect transistors. These devices utilize the company's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance for high efficiency switching DC/DC converters and switch mode power supplies. The FQD series is available in D-PAK packages, while the FQU series is available in -PAK packages.
| Drain-Source Voltage | 250 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 7.4 A |
| Continuous Drain Current (Tc = 100°C) | 4.7 A |
| Pulsed Drain Current | 29.6 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 165 mJ |
| Power Dissipation (Ta = 25°C) | 25 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Types | D-PAK, -PAK |
The part can dissipate up to 25W when the ambient temperature is 25°C.