FQD5P20 / FQU5P20 is a P-channel enhancement mode power field effect transistor. It features low on-state resistance, superior switching performance, and high energy pulse withstand capability. Suitable for high efficiency switching DC/DC converters.
This document provides technical specifications for the Fairchild Semiconductor FQD5P20 and FQU5P20 P-Channel enhancement mode power field effect transistors. These devices utilize proprietary planar stripe, DMOS technology tailored for high efficiency switching DC/DC converters.
| Drain-Source Voltage | -200 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | -3.7 A |
| Power Dissipation (Tc = 25°C) | 45 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Gate Threshold Voltage | -3.0 to 5.0 V |
| Total Gate Charge | 10 to 13 nC |
The maximum continuous drain current is -3.7 A when the temperature is 25°C.
The maximum drain-source voltage rating is -200 V.
The operating and storage temperature range is -55 to +150 °C.