This document describes the features and characteristics of the FQD8P10 / FQU8P10 100V P-Channel MOSFET. These transistors are produced using Fairchild's proprietary planar stripe DMOS technology, which provides low on-state resistance, superior switching performance, and the ability to withstand high energy pulses. They are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
This document provides technical specifications for the FQD8P10 and FQU8P10, which are 100V P-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe, DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching capabilities, making them suitable for low voltage applications such as audio amplifiers and high efficiency switching DC/DC converters.
| Drain-Source Voltage | -100 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | -6.6 A |
| Continuous Drain Current (Tj = 100°C) | -4.2 A |
| Power Dissipation (Tj = 25°C) | 25 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 2.84 °C/W |
| Package Types | D-PAK, 1-PAK |
They are produced using Fairchild's proprietary, planar stripe, DMOS technology.
The maximum continuous drain current is -6.6 A at a junction temperature of 25°C.