FQD5N20L/FQU5N20L is a 200V logic N-channel MOSFET produced by Philips, with RDS(on)=1.2Ω @VGS=10V, low gate charge (typ. 4.8 nC), low Crss (typ. 6.0 pF), fast switching, 100% avalanche tested, improved dv/dt capability and low-level gate drive requirement, suitable for high-efficiency switching DC/DC converters, switch mode power supplies and motor control.
This document provides a comprehensive technical overview of the Fairchild Semiconductor FQD5N20L and FQU5N20L devices. These are 200V logic N-Channel enhancement mode power field effect transistors produced using proprietary planar stripe, DMOS technology. They are designed to minimize on-state resistance while providing superior switching performance and high energy pulse withstand capability in avalanche and commutation modes.
| Drain-Source Voltage (Vdss) | 200 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 3.8 A |
| Pulsed Drain Current | 15.2 A |
| Gate-Source Voltage (Vgss) | +/- 20 V |
| Power Dissipation (Tc = 25°C) | 37 W |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction-to-Case) | 3.4 CW |
The device supports a maximum continuous drain current of 3.8 A when the junction temperature is 25°C.
The device is rated for an operating and storage temperature range from -55 to +150 °C.