This document introduces the features and advantages of QFET
This document provides design specifications for the FQD7N30 and FQU7N30, which are N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance while withstanding high energy pulses in avalanche and commutation modes.
| Drain-Source Voltage | 300 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 5.5 A |
| Pulsed Drain Current | 22 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 380 mJ |
| Operating and Storage Temperature Range | -55 to +150 °C |
The device supports a continuous current of 5.5 A at a case temperature of 25°C and 3.48 A at 100°C.
The maximum power dissipation is 50 W when the case temperature is maintained at 25°C.
The device operates and stores within a temperature range of -55 to +150 °C.