This document introduces the QFET TM FQD7P06 / FQU7P06 60V P-Channel MOSFET released by Fairchild Semiconductor Corporation in May 2001. These products are produced using Fairchild's proprietary technology, with features of low on-state resistance, superior switching performance, and the ability to withstand high energy pulses. They are suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
This document describes Fairchild Semiconductor's FQD7P06 and FQU7P06 60V P-Channel enhancement mode power field effect transistors. These devices utilize the company's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. They are designed for low voltage applications such as automotive systems, DC/DC converters, and portable battery-operated products.
| Drain-Source Voltage | -60 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | -5.4 A |
| Reverse Transfer Capacitance | 25 pF |
| Operating Temperature Range | -55 to +150 °C |
The maximum continuous drain current is -5.4 A when the case temperature is 25°C.
The typical static drain-source on-resistance is 0.45 Ω at VGS = -10 V.
Yes, the devices are 100% avalanche tested.