Fairchild Semiconductor FQD7N20L/FQU7N20L 200V Logic N-Channel MOSFET Datasheet

The FQD7N20L/FQU7N20L 200V LOGIC N-Channel MOSFET is a power field effect transistor produced by Fairchild Semiconductor International. It has excellent switching performance, low on-state resistance, low gate charge and low Crss. It is suitable for high-efficiency switching DC/DC converters, switch mode power supplies and motor control applications.


Fairchild Semiconductor FQD7N20L/FQU7N20L 200V Logic N-Channel MOSFET Datasheet - cover page
Brand
Fairchild
Document type
Datasheet
Language
English
Pages
9
File format
PDF
File size
622 KB
Published
12 July, 2012
Updated
30 September, 2023
MD5 checksum
2EED65FC4AF1E4C700348F41333B0644

About this manual

The document describes the FQD7N20L and FQU7N20L as N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe, DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance for high efficiency switching DC/DC converters, switch mode power supplies, and motor control applications.

What's inside

  • General Description
  • Features
  • Absolute Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typical Characteristics
  • Test Circuit & Waveforms
  • Mechanical Dimensions

Specifications

Drain-Source Voltage200 V
Continuous Drain Current (Tg = 25°C)5.5 A
Pulsed Drain Current22 A
Gate-Source Voltage+/- 20 V
Single Pulsed Avalanche Energy73 mJ
Operating and Storage Temperature Range-55 to +150 °C

Frequently asked questions

What is the typical gate charge?

The typical gate charge is 6.8 nC.

Is this device RoHS compliant?

Yes, the device is RoHS Compliant.

What are the available package types?

The devices are available in D-PAK and I-PAK packages.

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