This data sheet provides the product specifications of FQB4N90 / FQI4N90, including pin definition, package, maximum working voltage, maximum working current, switching speed, gate leakage and other parameters.
This document provides the design specifications for the Fairchild FQB4N90 and FQI4N90 N-Channel enhancement mode power field effect transistors. Produced using proprietary planar stripe, DMOS technology, these devices are tailored to minimize on-state resistance and provide superior switching performance for high efficiency switch mode power supplies. The datasheet includes absolute maximum ratings, electrical characteristics, and typical performance curves.
| Drain-Source Voltage | 900 V |
|---|---|
| Continuous Drain Current (Tc = 100°C) | 2.65 A |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Total Gate Charge | Typ 24 nC |
| Reverse Transfer Capacitance | Typ 9.5 pF |
Yes, they are well suited for high efficiency switch mode power supplies.
The single pulsed avalanche energy is 570 mJ and repetitive avalanche energy is 14 mJ.