FQP13N06L is a 60V logic N-channel MOSFET manufactured by Fairchild Semiconductor Corporation using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse resistance, and is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
This document is a datasheet for the Fairchild Semiconductor FQP13N06L, a 60V logic N-Channel enhancement mode power field effect transistor. The device utilizes Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is well-suited for low voltage applications such as automotive systems, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 13.6 A |
| Continuous Drain Current (Tc = 100°C) | 9.6 A |
| Pulsed Drain Current | 54.4 A |
| Gate-Source Voltage | +20 V |
| Single Pulsed Avalanche Energy | 90 mJ |
| Power Dissipation (Tj = 25°C) | 45 W |
| Operating and Storage Temperature Range | -55 to +175 °C |
| Thermal Resistance, Junction-to-Case | 3.35 °C/W |
| Thermal Resistance, Case-to-Sink | 0.5 °C/W |
| Thermal Resistance, Junction-to-Ambient | 62.5 °C/W |
| Package Type | TO-220 |
The maximum junction temperature rating is 175°C.
Yes, the device is 100% avalanche tested.
The typical gate charge is 4.8 nC.
The typical reverse transfer capacitance is 17 pF.