This document describes the features and characteristics of the FQB13N50C/FQI13N50C 500V N-Channel MOSFET. It is produced using Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse in the avalanche and commutation mode.
This document provides technical specifications for the Fairchild FQB13N50C/FQI13N50C, which are N-Channel enhancement mode power field effect transistors produced using proprietary planar stripe DMOS technology. These devices feature a 13A continuous drain current and 500V breakdown voltage, making them suitable for high efficiency switched mode power supplies and active power factor correction applications.
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 13 A |
| On-Resistance | 0.48 Ω |
| Gate Charge (Typical) | 43 nC |
| Reverse Transfer Capacitance | 20 pF |
| Operating Temperature Range | -55 to +150 °C |
The device operates and stores within a temperature range of -55 to +150 °C.
This MOSFET can handle a single pulsed avalanche energy of 860 mJ.