FQN1N60C is a 600V N-channel MOSFET with features such as 0.3A, 600V, RDS(on) = 11.5 Ω @ VGS = 10V, low gate charge (typical 4.8 nC), low Crss (typical 3.5pF), fast switching and 100% avalanche tested.
This document provides technical specifications and performance characteristics for the Fairchild Semiconductor FQN1N60C device. It is an N-Channel enhancement mode power field effect transistor produced using proprietary planar stripe, DMOS technology.
The datasheet details absolute maximum ratings, electrical characteristics including on-resistance and capacitance, switching parameters, and thermal data. It also includes typical performance curves for on-region characteristics, breakdown voltage variation with temperature, and safe operating areas.
| Drain-Source Voltage (Voss) | 600 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 0.3 A |
| Pulsed Drain Current | 1.2 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 33 mJ |
| Power Dissipation (Ta = 25°C) | 1 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | TO-92 |
The typical gate charge is 4.8 nC.
The typical Crss is 3.5 pF.