FQP13N10 is a 100V N-channel MOSFET from Fairchild with low on-state resistance, fast switching, 100% avalanche tested, suitable for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control
This document is a datasheet for the Fairchild Semiconductor FQP13N10, an N-channel enhancement mode power MOSFET produced using proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance for low voltage applications such as audio amplifiers and DC motor control.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 12.8 A |
| Maximum Junction Temperature | 175°C |
| Package Type | TO-220 |
The maximum junction temperature rating is 175°C.
The device supports a continuous drain current of 12.8 A when the case temperature is 25°C.
The maximum junction temperature rating is 175°C.
The device has a power dissipation rating of 65 W at a case temperature of 25°C.