FQH8N100C is a 1000V N-channel MOSFET produced by Fairchild. It has a current of 8A, a RDS(on) of 1.45Ω @VGS = 10 V, low gate charge (typical 53nC) and Crss (typical 16pF), fast switching, 100% avalanche tested and improved dv/dt capability.
This document is a datasheet for the Fairchild Semiconductor FQH8N100C, a 1000V N-Channel MOSFET. The device utilizes the company's proprietary planar stripe DMOS technology to achieve low on-state resistance and fast switching performance. It is designed for applications such as high-efficiency switched-mode power supplies, active power factor correction, and electronic lamp ballasts.
| Drain-Source Voltage | 1000 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 8.0 A |
| Pulsed Drain Current | 32 A |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-247 |
The maximum drain-source voltage is 1000 V.
The continuous drain current is 8.0 A at TC = 25°C.
Yes, the device is RoHS compliant.