This document is the datasheet of FQNL2N50B 500V N-Channel MOSFET, which introduces the features and characteristics of this device, including rated working voltage, current, gate voltage, gate capacitance, etc.
The document describes the Fairchild FQNL2N50B, an N-Channel enhancement mode power MOSFET produced using proprietary planar stripe DMOS technology. It is designed to minimize on-state resistance and provide superior switching performance for applications such as high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 0.35 A |
| Power Dissipation (Tg = 25°C) | 1.5 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
The device supports a continuous current of 0.35 A at 25°C and reduces to 0.22 A when operating at 100°C.
The maximum power dissipation for this MOSFET is rated at 1.5 W when the temperature is 25°C.
The device can operate and be stored within a temperature range of -55 to +150 °C.