FQN1N50C is a 500V N-channel MOSFET with features of low RDS(on), low gate charge and fast switching, suitable for high efficiency switched mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.
The Fairchild FQN1N50C is a 500V N-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe DMOS technology. Key features include a low on-state resistance of 6.0 Ω, low gate charge, and fast switching capabilities suitable for high-efficiency switched mode power supplies and active power factor correction applications.
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (25°C) | 0.38 A |
| On-Resistance | 6.0 Ω |
| Gate Charge | 4.9 nC |
| Reverse Transfer Capacitance | 4.1 pF |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-92 |
The maximum drain-source voltage is 500 V.
The typical on-state resistance is 6.0 Ω when VGS is 10 V.
The device operates and stores between -55°C and +150°C.