This datasheet provides information on FQP10N20C/FQPF10N20C, including product parameters, features, and applications.
This document provides technical specifications for the FQP10N20C and FQPF10N20C N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance for applications such as DC/DC converters and motor controls. The FQP series is housed in a TO-220 package, while the FQPF series uses a TO-220F package.
| Drain-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 9.5 A |
| Continuous Drain Current (Tg = 100°C) | 6.0 A |
| Pulsed Drain Current | 38 A |
| On-Resistance | 0.362 Ohms |
| Gate Charge (typical) | 20 nC |
| Reverse Transfer Capacitance | 40.5 pF |
| Thermal Resistance, Junction-to-Case | 1.74 °C/W |
| Operating Temperature Range | -55 to +150 °C |
The operating and storage temperature range is from -55 to +150 °C.