This document introduces the features and characteristics of QFET products, including QFET's structure principle, working principle, application scenarios, etc.
This document provides the design specifications and electrical characteristics for the FQP14N30 N-Channel enhancement mode power field effect transistor. Produced using Fairchild's proprietary planar stripe, DMOS technology, the device is tailored to minimize on-state resistance and provide superior switching performance for high efficiency switching DC/DC converters and switch mode power supplies.
The datasheet details absolute maximum ratings, electrical characteristics including off and on characteristics, dynamic parameters, and switching characteristics. It also includes typical performance graphs, package dimensions for the TO-220 package, and trademark information.
| Drain-Source Voltage | 300 V |
|---|---|
| Continuous Drain Current (25°C) | 14.4 A |
| Continuous Drain Current (100°C) | 9.1 A |
| Pulsed Drain Current | 57.6 A |
| On-Resistance | 0.29 Ω |
| Gate Charge (Typical) | 30 nC |
| Reverse Transfer Capacitance (Typical) | 23 pF |
| Power Dissipation (25°C) | 147 W |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-220 |
The device operates and stores within a range of -55 to +150 °C.