QFET QFET QFET QFET is a new generation of high performance, high density and high efficiency silicon carbide power device launched by Intel Corporation. This device uses Intel's unique silicon carbide substrate technology, which has a very high critical breakdown voltage and a very low on-resistance, and also has excellent thermal shock and thermal cycling characteristics, which can meet the harsh requirements of high power and high density applications.
The document describes the Fairchild FQP17N40, an N-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe, DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance for applications such as high efficiency switch mode power supplies and electronic lamp ballasts.
| Drain-Source Voltage | 400 V |
|---|---|
| Continuous Drain Current (25°C) | 16 A |
| Pulsed Drain Current | 64 A |
| Power Dissipation (25°C) | 170 W |
| Operating Temperature Range | -55 to +150 °C |
| On-Resistance (Typical) | 0.27 Ω |