This document is a white paper on QFET technology. It introduces the features and characteristics of QFET.
This document is a datasheet for the FQP16N25, an N-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe, DMOS technology. The device is optimized to minimize on-state resistance and provide superior switching performance, making it well-suited for high efficiency switching DC/DC converters and switch mode power supplies.
The datasheet provides absolute maximum ratings, electrical characteristics, and typical characteristics including graphs for on-resistance, capacitance, and switching times. It also includes test circuit diagrams for gate charge, resistive switching, and unclamped inductive switching, as well as package dimensions for the TO-220 package.
| Drain-Source Voltage | 250 V |
|---|---|
| Continuous Drain Current (25°C) | 16 A |
| Continuous Drain Current (100°C) | 10 A |
| Pulsed Drain Current | 64 A |
| Power Dissipation (25°C) | 142 W |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction-to-Case) | 0.88 °C/W |
| Static Drain-Source On-Resistance | 0.23 Ω |
| Package Type | TO-220 |
The maximum drain-source voltage is 250 V.
The continuous drain current at 25°C is 16 A.
The typical static drain-source on-resistance is 0.23 Ω at Vgs = 10 V and Id = 8.0 A.
The operating and storage temperature range is -55 to +150 °C.