FQB30N06L / FQI30N06L is a 60V logic N-channel MOSFET produced by Fairchild Semiconductor Corporation. The device has 32A, 60V, RDS(on) = 0.035Ω @VGS = 10 V, low gate charge (typical 15 nC), low Crss (typical 50 pF), fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating.
The document describes the FQB30N06L and FQI30N06L as N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe, DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance, making them suitable for low voltage applications such as automotive systems, DC/DC converters, and high efficiency switching for power management in portable products.
The datasheet provides absolute maximum ratings, electrical characteristics, and typical characteristics including on-resistance, capacitance, and switching times. It also includes test circuit diagrams and package dimensions for the PAK and P2PAK packages.
| Single Pulsed Avalanche Energy | 350 mJ |
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The maximum junction temperature rating is 175°C.
Yes, the product is RoHS Compliant.
The typical gate charge is 15 nC.