200V N-Channel MOSFET, features low gate charge, low input capacitance, high switching speed, 100% avalanche tested, improved dv/dt capability.
This document is a technical datasheet for the Fairchild Semiconductor FQB19N20C and FQI19N20C devices. These are 200V, 19A N-Channel enhancement mode power field effect transistors produced using proprietary planar stripe DMOS technology. They are designed to minimize on-state resistance and provide superior switching performance for high-efficiency switched-mode power supplies and active power factor correction applications.
| Drain-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 19.0 A |
| Power Dissipation (Tc = 25°C) | 139 W |
| On-Resistance | 0.17 Ω |
| Package Type | D2-PAK (TO-263) |