This datasheet provides the features parameters information of FQB34N20L / FQI34N20L N-Channel MOSFET product.
This document is a technical datasheet for the FQB34N20L (D2-PAK package) and FQI34N20L (I2-PAK package) 200V Logic N-Channel MOSFETs. Produced using Fairchild's proprietary planar stripe DMOS technology, these devices are designed to minimize on-state resistance while providing superior switching performance and high energy pulse withstand capability in avalanche and commutation modes.
The datasheet provides comprehensive electrical characteristics, including a 31A continuous drain current at 25°C, low gate charge (typical 55 nC), and fast switching speeds. It includes detailed specifications for off-state leakage, on-resistance variations with temperature, capacitance values, and dynamic switching parameters such as turn-on/off times and reverse recovery characteristics.
| Drain-Source Voltage (VDSS) | 200 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 31 A |
| On-Resistance (RDS(on)) @ VGS=10V, ID=15.5A | 0.075 Ω |
| Total Gate Charge (Qg) | Typical 55 nC |
| Reverse Transfer Capacitance (Crss) | Typical 52 pF |
| Operating Temperature Range | -55 to +150 °C |
These devices are produced using Fairchild's proprietary, planar stripe, DMOS technology.
Yes, they have a low level gate drive requirement allowing direct operation from logic drivers.
They are well suited for high efficiency switching DC/DC converters, switch mode power supply, and motor control.