This document describes the features and characteristics of the FQB33N10 / FQI33N10, a 100V N-Channel MOSFET. It includes low on-state resistance, superior switching performance, and ability to withstand high energy pulse in avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
The document describes the FQB33N10 and FQI33N10 as N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe, DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance, making them suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control. Key features include a 33A continuous drain current, 100V drain-source voltage rating, and RoHS compliance.
The datasheet details absolute maximum ratings, electrical characteristics including off and on characteristics, dynamic characteristics, and switching characteristics. It also presents typical characteristics through various graphs illustrating on-resistance, transfer characteristics, capacitance, and safe operating areas. Finally, the document includes package dimensions and land pattern recommendations for the D2-PAK and 2-PAK packages.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 33 A |
| Maximum Junction Temperature | 175°C |
| Power Dissipation (Tc = 25°C) | 127 W |
| Operating and Storage Temperature Range | -55 to +175 °C |
Yes, the product is RoHS Compliant.
The maximum junction temperature rating is 175°C.