The FQB27P06 / FQI27P06 is a 60V P-channel MOSFET produced by Fairchild, which has low gate charge, low Crss, fast switching, etc. It is suitable for low-voltage applications such as automotive, DC/DC converters, and high-efficiency switching for power management in portable and battery-operated products.
The document describes a series of P-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe, DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance for low voltage applications such as automotive systems, DC/DC converters, and portable battery-operated products.
| Drain-Source Voltage | -60 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | -27 A |
| Maximum Junction Temperature | +175 °C |
| Power Dissipation (Tc = 25°C) | 120 W |
| Total Gate Charge (Vgs = -48 V) | Typical 33 nC |
The device supports a continuous drain current of -19.1 A when the case temperature is 100°C.
These devices have a maximum junction temperature rating of 175°C.