This product is a high-performance power electronic measurement instrument with multiple input channels, wide measurement range, strong measurement functions, strong data processing capabilities, clear data display, simple operation, strong anti-interference ability and convenient use, which is widely used in the power system, electronic communication system, industrial control system and other industries for power electronic device testing, testing, fault diagnosis, analysis and maintenance.
This document is a technical datasheet for the Fairchild Semiconductor FQB19N20L and FQI19N20L devices. These are N-Channel enhancement mode power field effect transistors produced using proprietary planar stripe, DMOS technology. The devices are designed to minimize on-state resistance and provide superior switching performance while withstanding high energy pulses in avalanche and commutation modes.
| Drain-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 21 A |
| On-Resistance (Vgs = 10 V, Id = 10.5A) | 0.142 Ohm |
| Gate Charge (Typical) | 27 nC |
| Reverse Transfer Capacitance (Typical) | 30 pF |
| Operating and Storage Temperature Range | -55 to +150 °C |