This datasheet introduces the features and characteristics of FQB22P10 / FQI22P10 P-channel MOSFET devices.
This datasheet describes the Fairchild Semiconductor FQB22P10 and FQI22P10, which are 100V P-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. They are well-suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
| Drain-Source Voltage | -100 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | -22 A |
| Maximum Junction Temperature | 175°C |
| Gate Charge (Typical) | 40 nC |
| Reverse Transfer Capacitance (Typical) | 160 pF |
| Power Dissipation (Ta = 25°C) | 3.75 W |
| Operating Temperature Range | -55 to +175 °C |
These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Yes, the product is RoHS Compliant.
The maximum junction temperature rating is 175°C.