This document is a datasheet for N-Channel enhancement mode power field effect transistors
This document is a technical datasheet for the Fairchild Semiconductor FQB33N10L and FQI33N10L devices. These are N-Channel enhancement mode power field effect transistors produced using proprietary planar stripe, DMOS technology. They are designed to minimize on-state resistance and provide superior switching performance for low voltage applications such as high efficiency switching DC/DC converters and DC motor control.
| Continuous Drain Current (Tj = 25°C) | 33 A |
|---|---|
| Maximum Junction Temperature | +175 °C |
| Total Gate Charge (Typical) | 30 nC |
The device operates and stores within a temperature range of -55 to +175 °C.