This document is a product specification for a certain brand of product, which introduces the product's features and usage methods.
This document is a datasheet for the Fairchild Semiconductor FQB34N20 and FQI34N20, which are 200V N-Channel enhancement mode power field effect transistors. These devices utilize proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance for high efficiency DC/DC converters and motor control applications.
| Drain-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (25°C) | 31 A |
| Continuous Drain Current (100°C) | 20 A |
| Pulsed Drain Current | 124 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 640 mJ |
| Power Dissipation (Ta = 25°C) | 3.13 W |
| Operating Temperature Range | -55 to +150 °C |
| On-Resistance | 0.06 - 0.075 Ω |
| Total Gate Charge | 60 - 78 nC |
Yes, the document states that the product is RoHS Compliant.
The maximum lead temperature for soldering purposes is 300°C for 1/8" from case for 5 seconds.