FDS6670A is a N-Channel Logic Level MOSFET produced by Fairchild Semiconductor Corporation. It is suitable for low voltage and battery powered applications where low in-line power loss and fast switching are required.
The document describes the Fairchild Semiconductor FDS6670A, an N-Channel Logic Level MOSFET produced using the advanced PowerTrench process. It is specifically tailored to minimize on-state resistance while maintaining superior switching performance, making it well-suited for low voltage and battery-powered applications requiring low in-line power loss.
| Drain-Source Voltage | 30 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Pulsed Drain Current | 50 A |
| Operating Junction Temperature Range | -55 to +150 °C |
The maximum continuous drain current is 13 A.
Yes, these devices are well suited for low voltage and battery powered applications.