FDS4935BZ is a dual channel P-Channel PowerTrench MOSFET with fast switching speed and low gate charge, which can be used in DC/DC converters, synchronous or conventional switching PWM controllers and battery chargers.
This document is a technical datasheet for the Fairchild Semiconductor FDS4935BZ, a Dual 30 Volt P-Channel PowerTrench MOSFET. The device is designed to improve efficiency in DC/DC converters using synchronous or conventional switching PWM controllers and battery chargers.
Key features include high performance trench technology for low on-resistance, extended Vgs range (-25V) suitable for battery applications, and an integrated ESD protection diode between the gate and source. The datasheet provides absolute maximum ratings, electrical characteristics, typical characteristics graphs, and thermal information.
| Drain-Source Voltage (Vds) | -30 V |
|---|---|
| Gate-Source Voltage (Vgs) | +25 V |
| Operating Junction Temperature Range | -55 to +150 °C |
It is designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.
Yes, it features an ESD protection diode connected between the gate and source.