This document describes the features and characteristics of the FDS6574A 20V N-Channel PowerTrench MOSFET, which is specifically designed to improve the overall efficiency of DC/DC converters.
This document is a datasheet for the Fairchild Semiconductor FDS6574A, an N-Channel MOSFET designed to improve the efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. The device features low gate charge, high performance trench technology for extremely low on-resistance, and high power and current handling capability.
| Drain-Source Voltage | 20 V |
|---|---|
| Gate-Source Voltage | +8 V |
| Continuous Drain Current | 16 A |
| Pulsed Drain Current | 80 A |
| Power Dissipation (Single Operation) | 25 W |
| Operating Junction Temperature Range | -55 to +175 °C |
| Thermal Resistance (Junction-to-Ambient) | 50 °C/W |
| Thermal Resistance (Junction-to-Case) | 25 °C/W |
| Drain-Source Breakdown Voltage | 20 V |
| Gate Threshold Voltage | 0.4 to 1.5 V |
| Static Drain-Source On-Resistance | 4 to 9 mΩ |
| Input Capacitance | 7657 pF |
| Output Capacitance | 1432 pF |
| Reverse Transfer Capacitance | 775 pF |
| Maximum Continuous Diode Forward Current | 2.1 A |
It is designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Key features include low gate charge, high performance trench technology for extremely low on-resistance, and high power and current handling capability.
Yes, the device is RoHS compliant.