This document is a specification for the FDS6614A MOSFET chip, which can be used in various circuit designs.
This document is a technical datasheet for the Fairchild Semiconductor FDS6614A, an N-Channel Logic Level PowerTrench MOSFET. The device utilizes advanced PowerTrench process technology to minimize on-state resistance while maintaining superior switching performance.
The FDS6614A is designed for low voltage and battery-powered applications requiring low in-line power loss and fast switching speeds. Key features include a typical gate charge of 12nC, high current handling capability up to 9.3 A continuous drain current, and suitability for DC/DC converters, load switches, and motor drives.
| Drain-Source Voltage | 30 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Continuous Drain Current | 9.3 A |
| Pulsed Drain Current | 40 A |
| Power Dissipation (Single Operation) | 25 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction-to-Ambient) | 50 °C/W |
| Thermal Resistance (Junction-to-Case) | 25 °C/W |
The operating and storage junction temperature range is -55 to +150 °C.