This document describes the features and characteristics of Fairchild Semiconductor's FDS6375 P-Channel 2.5V specified PowerTrench MOSFET. The product is optimized for power management applications with a wide range of gate drive voltage (2.5V-8V).
The document describes the Fairchild FDS6375, a rugged P-Channel MOSFET utilizing the advanced PowerTrench process. It is specifically designed for power management applications such as load switches and battery protection, featuring a wide gate drive voltage range of 2.5V to 8V.
| Drain-Source Voltage (Vdss) | 20 V |
|---|---|
| Operating Junction Temperature Range | -55 to +175 °C |
It is optimized for power management applications including load switches and battery protection.
The device has been optimized for a wide range of gate drive voltage from 2.5V to 8V.