This document describes the features and characteristics of the FDS6630A N-Channel Logic Level PowerTrenchTM MOSFET. This MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process, which minimizes on-state resistance and provides superior switching performance. It is suitable for low voltage and battery powered applications that require low power loss and fast switching.
This document is a datasheet for the Fairchild Semiconductor FDS6630A, an N-Channel Logic Level MOSFET produced using the advanced PowerTrench process. The device is designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for low voltage and battery-powered applications such as DC/DC converters, load switches, and motor drives. Key features include a 6.5A continuous drain current, 30V drain-source voltage rating, and a low gate charge of 5nC typical.
| Drain-Source Voltage | 30 V |
|---|---|
| Gate-Source Voltage | ±20 V |
| Pulsed Drain Current | 40 A |
| Operating Junction Temperature Range | -55 to +150 °C |
The device is well suited for low voltage and battery powered applications such as DC/DC converters, load switches, and motor drives.
The typical gate charge is 5nC.
The maximum continuous drain current is 6.5 A.