The FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET is a high performance MOSFET device produced by Fairchild Semiconductor Corporation. It is suitable for applications such as load switches, battery protection and power management.
The document describes the Fairchild Semiconductor FDS6576, a P-Channel MOSFET utilizing the advanced PowerTrench process. It is specifically designed as a rugged gate version optimized for power management applications, supporting a wide range of gate drive voltages from 2.5V to 12V.
Key features include an extremely low on-resistance (RDS(ON)) of 0.014 Ω at VGS = –4.5 V and 0.020 Ω at VGS = –2.5 V, along with a high power handling capability of 11 A continuous current. The device is RoHS compliant and available in the SSO-8 package.
| Drain-Source Voltage (VDSS) | -20 V |
|---|---|
| Continuous Drain Current (ID) | -11 A |
| On-Resistance at VGS = -4.5V | 0.014 Ω |
| On-Resistance at VGS = -2.5V | 0.020 Ω |
| Package Type | SSO-8 |
The device supports a continuous drain current of –11 A.
The maximum power dissipation for single operation is 2.5 W.
The typical total gate charge is 43 nC.