FDS6575 is a P-channel MOSFET from Fairchild Semiconductor with a 2.5V rating and a maximum current of -10A. It has low gate charge and extremely low RDS(ON). It is suitable for power management, load switching and battery protection applications.
This document is a datasheet for the Fairchild Semiconductor FDS6575, a P-Channel MOSFET optimized for power management applications. It features a rugged gate design and is specified for operation with gate drive voltages ranging from 2.5V to 8V. The device is available in an SO-8 package and is designed for use in load switches and battery protection circuits.
| Drain-Source Voltage | 20 V |
|---|---|
| Gate-Source Voltage | +8 V |
| Operating Junction Temperature Range | -55 to +175 °C |
| Thermal Resistance, Junction-to-Ambient | 50 °C/W |
The device is optimized for power management applications including load switches and battery protection.
The MOSFET is optimized for a wide range of gate drive voltage from 2.5V to 8V.
The maximum continuous drain current is -10 A.