This document describes the features and characteristics of the FDS6570A N-Channel MOSFET. The MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process, which minimizes on-state resistance and provides superior switching performance. It is suitable for low voltage and battery powered applications.
The document describes the Fairchild Semiconductor FDS6570A, an N-Channel MOSFET produced using the advanced PowerTrench process. It is designed to minimize on-state resistance while maintaining superior switching performance, making it well-suited for low voltage and battery-powered applications such as DC/DC converters and load switches.
The datasheet details absolute maximum ratings, electrical characteristics including off and on states, dynamic characteristics like capacitance and gate charge, and typical performance curves. It also includes thermal resistance data, package outlines, ordering information, and trademark disclaimers.
| Drain-Source Voltage (V_DSS) | 20 V |
|---|---|
| Gate-Source Voltage (V_GSS) | +8 V |
| Pulsed Drain Current (I_D) | 50 A |
| Operating Junction Temperature Range | -55 to +150 °C |
This device is well suited for DC/DC converters, load switches, and battery protection circuits.
The maximum continuous drain current is 15 A.