FDS5672 N-Channel PowerTrench® MOSFET 60V, 12A, 10mΩ is a low power, high performance MOSFET with low gate charge, high power and current handling capability, suitable for DC/DC converters and other applications.
The document describes the Fairchild Semiconductor FDS5672, an N-Channel MOSFET optimized for improving the efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. Key features include high-performance trench technology for low on-resistance and fast switching speeds.
The datasheet provides comprehensive electrical characteristics, including maximum ratings such as a 60V drain-to-source voltage and 12A continuous current. It also details thermal resistance values, capacitance parameters, and typical performance curves like power dissipation versus ambient temperature. This manual is written in Chinese.
| Drain to Source Voltage (VDSS) | 60 V |
|---|---|
| Gate to Source Voltage (VGS) | ±20 V |
| On Resistance (rDS(ON)) at VGS=10V, ID=12A | 10 mΩ |
| Operating Temperature (TJ) | -55 to 150°C |
| Package Type | SO-8 |
It is designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
The device uses high performance trench technology to achieve extremely low rDS(ON).