The FDS6612A is a single N-channel logic level MOSFET produced by Fairchild Semiconductor using PowerTrench process, with extremely low RDS(ON) and superior switching performance. These devices are suitable for low voltage and battery powered applications requiring low in-line power loss and fast switching.
The FDS6612A is a single N-channel, logic-level, PowerTrench MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process. This device is specifically tailored to minimize on-state resistance while maintaining superior switching performance, making it well-suited for low voltage and battery-powered applications where low in-line power loss and fast switching are required.
| Drain-Source Voltage | 30 V |
|---|---|
| Pulsed Drain Current | 40 A |
| Operating Junction Temperature | -55 to +150 °C |
| Total Gate Charge | 5.4 nC |
| Turn-On Delay Time | 7 ns |
The operating and storage junction temperature range is -55 to +150 °C.
Yes, these devices are well suited for low voltage and battery powered applications.