ADVANCED POWER TECHNOLOGY APT10M11B2VR 100V 100A 0.011 handbook

This document describes the maximum ratings and static electrical characteristics of the products with model numbers APT10M1B2VR and APT10M11B2VR.

Brand: Advanced
Category: MOSFET
Document type: Datasheet
Language: English
Pages: 4
File format: PDF
File size: 65 KB
Published: 12 July, 2012
Updated: 28 September, 2023
MD5 checksum: 5CCE3F05BE84D3D6F6485ABC6A6676AD
PDF: ADVANCED POWER TECHNOLOGY APT10M11B2VR 100V 100A 0.011 handbook PDF

About this manual

This document is a technical datasheet for the Advanced Power Technology (APT) APT10M11B2VR, a high voltage N-Channel enhancement mode power MOSFET. The device utilizes new technology to minimize the JFET effect and reduce on-resistance while achieving faster switching speeds.

What's inside

Maximum Ratings
Static Electrical Characteristics
Dynamic Characteristics
Source-Drain Diode Ratings
Thermal Characteristics
Package Outline

Specifications

Drain-Source Voltage	100 Volts
Continuous Drain Current	100 Amps
Pulsed Drain Current	400 Amps
On-State Resistance	0.011 Ohms
Operating Junction Temperature Range	-55 to 150 C

Frequently asked questions

What is the maximum continuous drain current for this MOSFET at 25°C?

The device supports a continuous drain current of 100 Amps when the temperature is 25°C.

What is the maximum total power dissipation rating at 25°C?

The part can dissipate a maximum of 520 Watts when the temperature is 25°C.

What are the operating and storage junction temperature limits?

The component operates and stores within a range of -55 to 150 C.

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