APT10M19BVFR is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the cost of the device. This product is widely used in the field of power supplies.
This document provides a technical overview of the APT10M19BVFR, a new generation high voltage N-Channel enhancement mode power MOSFET. The device features minimized JFET effect, increased packing density, reduced on-resistance, and faster switching speeds through optimized gate layout.
| Drain-Source Voltage | 100 Volts |
|---|---|
| Continuous Drain Current | 75 Amps |
| Pulsed Drain Current | 300 Amps |
| Total Power Dissipation | 370 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Drain-Source On-State Resistance | 0.019 Ohms |
| Package Type | TO-247 |
The device uses a popular TO-247 package.
Yes, the body diode is 100% avalanche tested.