APT11GF120KR is a new generation of high voltage power IGBTs using Non-Punch Through Technology. It features high voltage withstand, low forward voltage drop, large saturation gate current and fast switching characteristics, making it suitable for automotive starter, lighting, inverter, electric vehicle and other power electronic applications.
This document is a technical datasheet for the Advanced Power Technology APT11GF120KR Fast IGBT. It describes the device as a new generation of high voltage power IGBTs utilizing Non-Punch Through Technology to offer superior ruggedness, fast switching speed up to 20KHz, and low Collector-Emitter On voltage.
The datasheet provides comprehensive static electrical characteristics, including collector-emitter breakdown voltage, gate threshold voltage, and leakage currents. It also lists dynamic characteristics such as input/output capacitance, total gate charge, turn-on/off delay times, and switching energies under various test conditions.
| Collector-Emitter Voltage | 1200 Volts |
|---|---|
| Total Power Dissipation | 125 Watts |
| Operating Junction Temperature Range | -55 to 150 °C |
The operating and storage junction temperature range extends from -55 to 150 degrees Celsius.
A mounting torque of 10 lbsin is required when using a 6-32 or 3mm binding head machine screw.