This document is about the characteristics and technical parameters of APT1201R4, including maximum voltage, continuous current, pulsed current, leakage current, gate voltage, gate threshold voltage, etc.
This document is a datasheet for the Advanced Power Technology APT1201R4BLL and APT1201R4SLL N-Channel enhancement mode power MOSFETs. These devices utilize the Power MOS 7™ technology, which combines lower conduction and switching losses with exceptionally fast switching speeds inherent to the patented metal gate structure. The MOSFETs are available in TO-247 or Surface Mount D°PAK packages.
| Drain-Source Voltage | 1200 Volts |
|---|---|
| Continuous Drain Current | 9 Amps |
| Pulsed Drain Current | 36 Amps |
| Total Power Dissipation | 300 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Drain-Source On-State Resistance | 1.40 Ohms |
| Gate Threshold Voltage | 3 to 5 Volts |
The maximum continuous drain current is 9 amps when the temperature is 25°C.
The total power dissipation is 300 watts at a temperature of 25°C.
The device operates and stores within a junction temperature range of -55 to 150 C.